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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT DISCRETE TO-247Tube----
IXYSIGBT PT 650V 58A TO-247ADTubeTO-247ADThrough HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 50A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 50A TO-247TubeTO-247 (IXYH)Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 1700V 58A TO-247TubeTO-247 (IXYH)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1700V 58A TO-247TubeTO-247 (IXYH)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 46A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 44A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
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