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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXXX140N65B4H1 $11.43 | IXYS | IGBT 650V 340A PLUS247 | Tube | PLUS247™-3 | Through Hole | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |
![]() IXXX160N65B4 $22.33 | IXYS | IGBT PT 650V 310A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX4™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXX160N65C4 $20.51 | IXYS | IGBT PT 650V 290A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX4™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXX200N60B3 $17.32 | IXYS | IGBT 600V 380A PLUS247 | Tube | PLUS247™-3 | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXXX200N60C3 $18.28 | IXYS | IGBT PT 600V 340A PLUS247 | Tube | PLUS247™-3 | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXXX200N65B4 $31.91 | IXYS | IGBT PT 650V 370A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX4™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXX300N60B3 $28.17 | IXYS | IGBT PT 600V 550A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXX300N60C3 $18.45 | IXYS | IGBT PT 600V 510A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |

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