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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 2500V 28A TO-263HVTubeTO-263HVSurface MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 38A TO-263AATubeTO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 80A TO-263HVTubeTO-263HVSurface MountGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 76A TO-263HVTubeTO-263HVSurface MountGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 40A TO-263HVTubeTO-263HVSurface MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 40A TO-263HVTape & Reel (TR)TO-263HVSurface MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 68A TO-263HVTubeTO-263HVSurface MountGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSDISC. IGBT XPT-GENX4 TO-263HVTape & Reel (TR)----
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