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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 650V 58A TO-220TubeTO-220Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSDISC IGBT XPT-GENX3 TO-220AB/FPTube----55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 50A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 18A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1000V 85A TO-220TubeTO-220 (IXYP)Through HoleXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1000V 76A TO-220TubeTO-220Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 106A TO-220TubeTO-220 (IXYP)Through HoleXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT DISCRETE TO-220Tube----
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