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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYP20N65B3D1 $1.84 | IXYS | IGBT PT 650V 58A TO-220 | Tube | TO-220 | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYP20N65C3 $1.22 | IXYS | DISC IGBT XPT-GENX3 TO-220AB/FP | Tube | - | - | - | -55°C ~ 175°C (TJ) |
![]() IXYP20N65C3D1 $4.04 | IXYS | IGBT PT 650V 50A TO-220-3 | Tube | TO-220-3 | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYP20N65C3D1M $1.53 | IXYS | IGBT PT 650V 18A TO-220-3 | Tube | TO-220-3 | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYP24N100A4 $4.74 | IXYS | IGBT PT 1000V 85A TO-220 | Tube | TO-220 (IXYP) | Through Hole | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |
![]() IXYP24N100C4 $4.73 | IXYS | IGBT PT 1000V 76A TO-220 | Tube | TO-220 | Through Hole | GenX4™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYP30N120A4 $2.91 | IXYS | IGBT 1200V 106A TO-220 | Tube | TO-220 (IXYP) | Through Hole | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |
![]() IXYP30N120B4 $2.91 | IXYS | IGBT DISCRETE TO-220 | Tube | - | - | - | - |

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