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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 900V 20A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-
IXYSIGBT PT 650V 70A TO-3PTubeTO-3PThrough HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 86A TO-3PTubeTO-3PThrough HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBTTubeTO-3PThrough HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 104A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBTTube----
IXYSIGBT 1200V 56A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT TRENCH FS 650V 290A TO268HVBulkTO-268HV (IXYT)Surface MountGen5 XPT™-55°C ~ 175°C (TJ)
Add ComparisonUp to 4 can be added