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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYT85N120A4HV $18.33 | IXYS | IGBT PT 1200V 300A TO-268HV | Tube | TO-268HV (IXYT) | Surface Mount | - | -55°C ~ 175°C (TJ) |
![]() IXYT90N65A5HV $7.68 | IXYS | IGBT TRENCH FS 650V 220A TO268HV | Bulk | TO-268HV (IXYT) | Surface Mount | Gen5 XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYX100N120B3 $17.59 | IXYS | IGBT PT 1200V 225A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYX100N120C3 $24.44 | IXYS | IGBT 1200V 188A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYX100N65B3D1 $11.47 | IXYS | IGBT PT 650V 225A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYX110N120A4 $15.39 | IXYS | IGBT PT 1200V 375A TO-247 | Tube | TO-247 (IXTH) | Through Hole | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |
![]() IXYX110N120B4 $19.13 | IXYS | IGBT 1200V 340A PLUS247 | Tube | PLUS247™-3 | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYX110N120C4 $20.02 | IXYS | IGBT 1200V 310A PLUS247 | Tube | PLUS247™-3 | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |

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