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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 2500V 95A PLUS247TubePLUS247™-3Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 95A PLUS247TubePLUS247™-3Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 600A PLUS247TubePLUS247™-3Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 1700V 108A PLUS247TubePLUS247™-3Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 70A TO-247PLUS-HVTubeTO-247PLUS-HVThrough HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 4500V 95A TO-247PLUS-HVTubeTO-247PLUS-HVThrough HoleXPT™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 178A PLUS247TubePLUS247™-3Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 20A TO-252AATubeTO-252AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
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