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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYT12N250CV1HV $34.39 | IXYS | IGBT 2500V 28A TO-268HV | Tube | TO-268HV (IXYT) | Surface Mount | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYT20N120C3D1HV $5.18 | IXYS | IGBT 1200V 36A TO-268HV | Tube | TO-268HV (IXYT) | Surface Mount | XPT™, GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXYT25N250CHV $29.74 | IXYS | IGBT 2500V 95A TO-268 | Tube | TO-268 | Surface Mount | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYT30N450HV $38.62 | IXYS | IGBT 4500V 60A TO-268HV | Tube | TO-268HV (IXYT) | Surface Mount | XPT™ | -55°C ~ 150°C (TJ) |
![]() IXYT30N65C3H1HV $4.28 | IXYS | IGBT PT 650V 60A TO-268AA | Tube | TO-268AA | Surface Mount | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYT40N120A4HV $5.04 | IXYS | IGBT PT 1200V 140A TO-268HV | Tube | TO-268HV (IXYT) | Surface Mount | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |
![]() IXYT55N120A4HV $13.37 | IXYS | IGBT PT 1200V 175A TO-268HV | Tube | TO-268HV (IXYT) | Surface Mount | - | -55°C ~ 175°C (TJ) |
![]() IXYT80N90C3 $9.92 | IXYS | IGBT 900V 165A TO-268AA | Tube | TO-268AA | Surface Mount | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |

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