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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1200V 75A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT DISCRETE TO-220Tube----
IXYSIGBT PT 650V 60A TO-220TubeTO-220Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 90A TO-220BulkTO-220 (IXYP)Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 130A TO-220BulkTO-220 (IXYP)Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 130A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 134A TO-220TubeTO-220 (IXYP)Through HoleXPT™, GenX5™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 20A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-
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