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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 650V 470A SOT-227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 1700V 88A SOT-227BTubeSOT-227BChassis MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1700V 120A SOT-227BTubeSOT-227BChassis MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 150A SOT-227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 32A TO-220TubeTO-220Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 30A TO-220-3TubeTO-220-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 30A TO-220TubeTO-220Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 15A TO220 ISOLATED TABTubeTO-220 Isolated TabThrough HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
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