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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYN300N65A3 $20.55 | IXYS | IGBT PT 650V 470A SOT-227B | Tube | SOT-227B | Chassis Mount | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYN30N170CV1 $30.52 | IXYS | IGBT 1700V 88A SOT-227B | Tube | SOT-227B | Chassis Mount | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYN50N170CV1 $39.36 | IXYS | IGBT 1700V 120A SOT-227B | Tube | SOT-227B | Chassis Mount | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYN75N65C3D1 $17.27 | IXYS | IGBT 650V 150A SOT-227B | Tube | SOT-227B | Chassis Mount | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYP10N65B3D1 $1.81 | IXYS | IGBT PT 650V 32A TO-220 | Tube | TO-220 | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
| IXYS | IGBT PT 650V 30A TO-220-3 | Tube | TO-220-3 | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) | |
![]() IXYP10N65C3D1 $1.56 | IXYS | IGBT PT 650V 30A TO-220 | Tube | TO-220 | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYP10N65C3D1M $1.31 | IXYS | IGBT 650V 15A TO220 ISOLATED TAB | Tube | TO-220 Isolated Tab | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |

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