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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 2500V 29A TO-247TubeTO-247 (IXYH)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 220A TO-247TubeTO-247 (IXTH)Through HoleXPT™, GenX5™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 21A ISO247TubeISO247Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT 1200V 188A TO-264TubeTO-264 (IXYK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 225A TO-264TubeTO-264Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 375A TO-264TubeTO-264 (IXYK)Through HoleXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 340A TO-264TubeTO-264 (IXYK)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 310A PLUS264TubePLUS264™Through HoleXPT™-55°C ~ 175°C (TJ)
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