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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 650V 80A TO-247TubeTO-247 (IXYH)Through HoleGenX3™, XPT™-
IXYSIGBT 900V 105A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 90A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT 1200V 100A TO-247TubeTO-247 (IXYH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 90A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 178A TO-247TubeTO-247 (IXYH)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 130A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 132A TO-247TubeTO-247 (IXTH)Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
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