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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 650V 170A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 175A TO-247TubeTO-247 (IXYH)Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 170A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 165A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 200A TO-247TubeTO-247 (IXYH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 300A TO-247TubeTO-247 (IXTH)Through Hole--55°C ~ 175°C (TJ)
IXYSIGBT 1200V 240A TO-247TubeTO-247 (IXTH)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 29A TO-247HVTubeTO-247HVThrough HoleXPT™-55°C ~ 175°C (TJ)
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