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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYH75N65C3 $4.00 | IXYS | IGBT PT 650V 170A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH75N65C3D1 $7.82 | IXYS | IGBT PT 650V 175A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYH75N65C3H1 $13.96 | IXYS | IGBT PT 650V 170A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH80N90C3 $13.71 | IXYS | IGBT 900V 165A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH82N120C3 $17.98 | IXYS | IGBT 1200V 200A TO-247 | Tube | TO-247 (IXYH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH85N120A4 $18.02 | IXYS | IGBT PT 1200V 300A TO-247 | Tube | TO-247 (IXTH) | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() IXYH85N120C4 $13.84 | IXYS | IGBT 1200V 240A TO-247 | Tube | TO-247 (IXTH) | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH8N250CHV $17.43 | IXYS | IGBT 2500V 29A TO-247HV | Tube | TO-247HV | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |

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