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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYK30N170CV1 $12.29 | IXYS | IGBT PT 1700V 100A TO-264 | Tube | TO-264 (IXYK) | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYK85N120C4H1 $22.56 | IXYS | IGBT TRENCH 1200V 220A SOT-227B | Tube | SOT-227B | Chassis Mount | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYL40N250CV1 $57.36 | IXYS | IGBT 2500V 70A ISOPLUSI5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYL60N450 $102.74 | IXYS | IGBT 4500V 90A ISOPLUSI5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | XPT™ | -55°C ~ 150°C (TJ) |
![]() IXYN110N120A4 $32.57 | IXYS | IGBT PT 1200V 275A SOT-227B | Tube | SOT-227B | Chassis Mount | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |
![]() IXYN120N65B3D1 $26.15 | IXYS | IGBT PT 650V 250A SOT-227B | Tube | SOT-227B | Chassis Mount | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYN120N65C3D1 $26.15 | IXYS | IGBT PT 650V 190A SOT-227B | Tube | SOT-227B | Chassis Mount | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYN150N60B3 $13.55 | IXYS | IGBT 600V 250A SOT-227B | Tube | SOT-227B | Chassis Mount | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |

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