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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 320A TO-264TubeTO-264 (IXYK)Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 240A TO-264TubeTO-264 (IXYK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 480A TO-264TubeTO-264 (IXYK)Through HoleXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 310A TO-264TubeTO-264 (IXYK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 400A TO-264BulkTO-264 (IXYK)Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 410A TO-264TubeTO-264Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 510A TO-264BulkTO-264 (IXYK)Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 600A PLUS264TubePLUS264™Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
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