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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 650V 130A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 175A TO-247TubeTO-247 (IXTH)Through Hole--55°C ~ 175°C (TJ)
IXYSIGBT TRENCH 1200V 138A TO-247TubeTO-247 (IXTH)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 140A TO-247TubeTO-247 (IXTH)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH 1200V 126A TO-247TubeTO-247 (IXTH)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 134A TO-247BulkTO-247 (IXYH)Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 140A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 240A TO-247ADTubeTO-247ADThrough HoleXPT™, GenX4™-55°C ~ 175°C (TJ)
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