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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 390V 20A D2PAKBulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
onsemiIGBT 390V 20A 150W D2PAKTubeD2PAKSurface Mount--55°C ~ 175°C (TJ)
onsemiIGBT 390V 20A 150W D2PAKTube,TubeD2PAKSurface Mount--55°C ~ 175°C (TJ)
onsemiIGBT, 20A, 390V, N-CHANNELBulk--*-
onsemiIGNITION IGBT 20 A, 350 V, N-CHABulk--*-
onsemiIGBT 390V 20A 150W D2PAK3Tape & Reel (TR)D2PAKSurface Mount--
onsemiIGBT 390V 20A D2PAKBulkD2PAKSurface Mount--
onsemiIGBT 365V 20A D2PAKBulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
Add ComparisonUp to 4 can be added