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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 390V 20A DPAKTape & Reel (TR),BulkDPAKSurface Mount--55°C ~ 175°C (TJ)
onsemiIGBT 390V 20A DPAKTape & Reel (TR),BulkDPAKSurface Mount--55°C ~ 175°C (TJ)
Littelfuse Inc.IGBT 445V 12A TO-252Tape & Reel (TR)TO-252 (DPAK)Surface Mount--55°C ~ 175°C (TJ)
onsemiIGBT 440V 15A TO-220TubeTO-220Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT 440V 15A TO-220TubeTO-220Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT 440 20ABulk--*-
onsemiIGBT 9A 600V DPAKTape & Reel (TR)DPAKSurface Mount-175°C (TJ)
onsemiIGBT 5A 600V DPAKTape & Reel (TR),Bulk--*-
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