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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 600V 20A TO-220F-3FSTube,TubeTO-220F-3FSThrough Hole-150°C (TJ)
onsemiIGBT 600V 20A DPAKTape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)DPAKSurface Mount-175°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT 1200V 15A TO247-3Bulk,Tube--*-
onsemiIGBT 1200V 30A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-247Bulk,Tube,TubeTO-247-3Through Hole--40°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-247TubeTO-247-3Through Hole--40°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-247Tube,TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
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