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Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
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Understand how a comparator switches at a voltage threshold, why hysteresis prevents chatter, and which output and input specs matter.
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Compare Pt100 and Pt1000 RTDs, two-, three- and four-wire connections, excitation and self-heating. Build an error budget from element to reported temperature.
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