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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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Understand thermal fuse operation, Tf, Th and Tm, electrical ratings and mounting. Check temperature limits and replacement requirements for your design.
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