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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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TOKYO, July 31, 2026 — Renesas Electronics Corporation has officially announced a major domestic manufacturing restructuring, confirming plans to gradually discontinue all wafer fabrication…
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Recently, the global electronic components market has been constantly evolving, and different regions and enterprises have witnessed new moves in aspects such as technological…
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ON Semiconductor (onsemi), a global leader in intelligent power and sensing technologies, has announced plans to implement price adjustments for select product lines, effective…
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Tempe, Arizona‑based semiconductor giant Microchip Technology has formally rolled out selective product price increases across its MCU, power‑management IC, memory controller and analog component…
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The global memory market is entering an unprecedented supply-constrained phase as soaring demand from artificial intelligence (AI) infrastructure collides with strategic capacity reallocations by…
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Hsinchu, Taiwan – April 18, 2026 – United Microelectronics Corporation (UMC, NYSE: UMC), a leading global semiconductor foundry specializing in mature process technologies, has…
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Over the past week, the global electronic components sector has witnessed dual transformations in policy and technology: Coupled with mounting pressure from a worsening…
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Dutch authorities announced on November 7 the lifting of control measures on Nexperia (formerly NXP Semiconductors’ Standard Products division), marking the end of a…
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What Is NAND Flash? A Practical Guide for Engineers & Procurement Teams In today’s data-driven world—from smartphones and SSDs to industrial IoT devices—NAND flash…
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See when an inductor behaves linearly, how DC bias and saturation reduce inductance, and which current and temperature curves to check.
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Compare Pt100 and Pt1000 RTDs, two-, three- and four-wire connections, excitation and self-heating. Build an error budget from element to reported temperature.
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Munich, Germany – May 26, 2026 – Power semiconductor and automotive chip giant Infineon Technologies AG has formally notified customers worldwide of a second…
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