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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT PT 1000V 16A TO-263AA | Tube | TO-263AA | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 120A PLUS264 | Tube | PLUS264™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 15A ISOPLUS220 | Tube | ISOPLUS220™ | Through Hole | HiPerFAST™ | -40°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 15A ISOPLUS220 | Tube | ISOPLUS220™ | Through Hole | HiPerFAST™ | -40°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 20A ISOPLUS220 | Tube | ISOPLUS220™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 20A ISOPLUS220 | Tube | ISOPLUS220™ | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
 IXGF20N250 $40.10 | IXYS | IGBT 2500V 23A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | - | -55°C ~ 150°C (TJ) |
IXGF20N300 $30.12 | IXYS | IGBT 3000V 22A ISOPLUS I4-PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | - | -55°C ~ 150°C (TJ) |
