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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 900V 51A TO-247ADTubeTO-247ADThrough HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXGH2N250
IXGH2N250
$14.99
IXYSIGBT 2500V 5.5A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 60A TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 48A TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 50A TO-247ADTubeTO-247ADThrough Hole--
IXYSIGBT 600V 60A TO-247ADTubeTO-247ADThrough HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 70A TO-247ADTubeTO-247ADThrough HoleHiPerFAST™-55°C ~ 150°C (TJ)
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