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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT 1400V 60A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™ | - | |
 IXGX320N60A3 $8.95 | IXYS | IGBT PT 600V 320A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
IXGX320N60B3 $30.24 | IXYS | IGBT PT 600V 500A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™ | - |
| IXYS | IGBT NPT 1700V 75A PLUS247 | Box | PLUS247™-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 1200V 70A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 1200V 70A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
IXGX35N120CD1 $10.80 | IXYS | IGBT 1200V 70A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT PT 300V 400A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
