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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT NPT 1200V 55A TO-247ADBulkTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1200V 25A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT 1200V 45A ISOPLUS247TubeISOPLUS247™Through Hole--
IXYSIGBT PT 600V 20A TO-263AABulkTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 30A TO-263AABoxTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 35A TO-263AABoxTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 20A TO-247ADBoxTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 30A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
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