Product categories

Filter by price :
IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 600V 75A PLUS247TubePLUS247™-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A PLUS247TubePLUS247™-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A PLUS247TubePLUS247™-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT NPT 2500V 170A PLUS247TubePLUS247™-3Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 260A PLUS247TubePLUS247™-3Through HoleGenX3™-
IXYSIGBT PT 1200V 230A PLUS247TubePLUS247™-3Through HoleGenX3™-
IXYSIGBT PT 1200V 5A TO-252AABulkTO-252AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 2500V 32A ISOPLUS I4PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added