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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYH40N65B3D1 $3.78 | IXYS | IGBT 650V 86A TO-247 | Tube | TO-247 (IXTH) | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYH40N65C3 $2.78 | IXYS | IGBT PT 650V 80A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH40N65C3D1 $3.78 | IXYS | IGBT PT 650V 80A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH40N65C3H1 $4.55 | IXYS | IGBT PT 650V 80A TO-247 | Tube | TO-247 (IXYH) | Through Hole | GenX3™, XPT™ | - |
![]() IXYH40N90C3 $3.41 | IXYS | IGBT 900V 105A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH40N90C3D1 $10.43 | IXYS | IGBT 900V 90A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 150°C (TJ) |
![]() IXYH50N120C3 $10.95 | IXYS | IGBT 1200V 100A TO-247 | Tube | TO-247 (IXYH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH50N120C3D1 $12.89 | IXYS | IGBT 1200V 90A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 150°C (TJ) |

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