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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 650V 86A TO-247TubeTO-247 (IXTH)Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 80A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 80A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 80A TO-247TubeTO-247 (IXYH)Through HoleGenX3™, XPT™-
IXYSIGBT 900V 105A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 90A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT 1200V 100A TO-247TubeTO-247 (IXYH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 90A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
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