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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYH30N120C4 $3.74 | IXYS | IGBT PT 1200V 94A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |
![]() IXYH30N120C4H1 $9.00 | IXYS | IGBT TRENCH 1200V 94A TO-247 | Tube | TO-247 (IXTH) | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH30N170C $13.76 | IXYS | IGBT 1700V 108A TO-247 | Tube | TO-247 (IXTH) | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH30N450HV $48.57 | IXYS | IGBT PT 4500V 60A TO-247HV | Tube | TO-247HV | Through Hole | XPT™ | -55°C ~ 150°C (TJ) |
![]() IXYH30N65B3D1 $4.79 | IXYS | IGBT PT 650V 70A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYH30N65C3 $2.04 | IXYS | IGBT PT 650V 60A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH30N65C3H1 $4.17 | IXYS | IGBT PT 650V 60A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH40N120A4 $4.32 | IXYS | IGBT PT 1200V 140A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |

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