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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYH16N250CV1HV $21.29 | IXYS | IGBT 2500V 35A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH20N120C3 $2.69 | IXYS | IGBT 1200V 40A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH20N120C3D1 $9.27 | IXYS | IGBT 1200V 36A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 150°C (TJ) |
![]() IXYH20N120C4 $3.51 | IXYS | IGBT DISCRETE TO-247 | Tube | - | - | - | - |
![]() IXYH20N65B3 $1.62 | IXYS | IGBT PT 650V 58A TO-247AD | Tube | TO-247AD | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYH20N65C3 $1.66 | IXYS | IGBT PT 650V 50A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH20N65C3D1 $3.38 | IXYS | IGBT PT 650V 50A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYH24N170C $9.36 | IXYS | IGBT 1700V 58A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |

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