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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1200V 164A PLUS264TubePLUS264™Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT 4500V 23A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleXPT™-55°C ~ 150°C (TJ)
Littelfuse Inc.IGBT 4500V 60A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleXPT™-55°C ~ 150°C (TJ)
IXYSIGBT 650V 240A TO-247TubeTO-247 (IXTH)Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 200A TO-247TubeTO-247 (IXTH)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 230A TO-247BulkTO-247 (IXYH)Through HoleGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1700V 36A TO-247TubeTO-247 (IXYH)Through HoleXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1700V 36A TO-247TubeTO-247 (IXYH)Through HoleXPT™-55°C ~ 175°C (TJ)
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