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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 650V 370A PLUS247TubePLUS247™-3Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 550A PLUS247TubePLUS247™-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 510A PLUS247TubePLUS247™-3Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 28A TO-263HVTubeTO-263HVSurface MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 38A TO-263AATubeTO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 80A TO-263HVTubeTO-263HVSurface MountGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 76A TO-263HVTubeTO-263HVSurface MountGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 40A TO-263HVTubeTO-263HVSurface MountXPT™, GenX3™-55°C ~ 175°C (TJ)
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