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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 600V 550A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 510A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT MOD 600V 170A 500W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 150°C (TJ)
IXYSIGBT MOD 650V 215A 750W SOT227BTubeSOT-227BChassis MountXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT MOD 650V 210A 750W SOT227BTubeSOT-227BChassis MountXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT MOD 600V 280A 940W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT MOD 600V 200A 780W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 150°C (TJ)
IXYSIGBT MOD 600V 200A 780W SOT227BTubeSOT-227BChassis MountXPT™, GenX3™-55°C ~ 150°C (TJ)
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