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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 600V 200A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 170A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT PT 650V 240A TO-264TubeTO-264 (IXXK)Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 310A TO-264TubeTO-264 (IXXK)Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 290A TO-264TubeTO-264 (IXXK)Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 380A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 340A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 370A TO-264TubeTO-264 (IXXK)Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
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