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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 650V 440A SOT-227BTubeSOT-227BChassis MountXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 520A SOT-227BTubeSOT-227BChassis MountGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 38A TO-220-3TubeTO-220-3Through HoleXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT 600V 120A TO-220-3TubeTO-220-3Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 600V 33A TO-3PTubeTO-3PThrough HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 145A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™, XPT™-
IXYSIGBT PT 650V 150A ISOPLUS247TubeISOPLUS247™Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT DISCRETE TO-268HVTube----
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