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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1200V 40A TO-263HVTape & Reel (TR)TO-263HVSurface MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 1200V 68A TO-263HVTubeTO-263HVSurface MountGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSDISC. IGBT XPT-GENX4 TO-263HVTape & Reel (TR)----
IXYSIGBT 650V 20A TO-263AATubeTO-263AASurface MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 50A TO-263AATape & Reel (TR)TO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 50A TO-263AATubeTO-263AASurface MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT DISCRETE TO-263HVTube----
IXYSIGBT PT 1200V 106A TO-263HVTubeTO-263HVSurface MountGenX4™, XPT™-55°C ~ 175°C (TJ)
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