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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT TRENCH FS 650V 130A TO-263BulkTO-263 (D2PAK)Surface MountGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 130A TO-263AATubeTO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 132A TO-263AATape & Reel (TR)TO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 110A TO-263BulkTO-263 (D2PAK)Surface MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 122A TO-263BulkTO-263 (D2PAK)Surface MountGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 134A TO-263BulkTO-263 (D2PAK)Surface MountGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 29A TO-263HVTubeTO-263HVSurface MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 20A TO-263AATubeTO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
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