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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Sanken Electric USA Inc.IGBT TRENCH FS 650V 80A TO-3P-3LBulkTO-3P-3LThrough Hole-175°C (TJ)
onsemiIGBT, 18A, 600V, N-CHANNELBulk--*-
onsemiIGBT 440V 15A TO-220BulkTO-220Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT 440V 15A TO-220BulkTO-220Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT, 26A, 600V, N-CHANNELBulk--*-
onsemiIGBT, 19A, 380V, N-CHANNELBulk--*-
onsemiIGBT 135V 20A TO-220-3BulkTO-220-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT T0220 360V CLBulk--*-
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