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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT, 6A, 600V, N-CHANNELBulk--*-
onsemiIGBT, 6A, 600V, N-CHANNELBulk--*-
onsemiIGBT, 10A, 600V, N-CHANNELBulk--*-
onsemiIGBT, 10A, 600V, N-CHANNELBulk--*-
onsemiTRANS IGBT CHIP N-CH 1.2KV 20ABulk--*-
onsemiIGBT, 18A, 600V, N-CHANNELBulk--*-
MotorolaIGBT 1200V 28A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
onsemiTRANS IGBT CHIP N-CH 600V 50A 3PBulk--*-
Add ComparisonUp to 4 can be added