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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() MGP4N60E $0.51 | onsemi | IGBT, 6A, 600V, N-CHANNEL | Bulk | - | - | * | - |
![]() MGP4N60ED $0.37 | onsemi | IGBT, 6A, 600V, N-CHANNEL | Bulk | - | - | * | - |
![]() MGP7N60E $0.43 | onsemi | IGBT, 10A, 600V, N-CHANNEL | Bulk | - | - | * | - |
![]() MGP7N60ED $0.48 | onsemi | IGBT, 10A, 600V, N-CHANNEL | Bulk | - | - | * | - |
![]() MGW12N120D $2.36 | onsemi | TRANS IGBT CHIP N-CH 1.2KV 20A | Bulk | - | - | * | - |
![]() MGW14N60ED $1.16 | onsemi | IGBT, 18A, 600V, N-CHANNEL | Bulk | - | - | * | - |
![]() MGW20N120 $3.69 | Motorola | IGBT 1200V 28A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() MGY30N60D $2.72 | onsemi | TRANS IGBT CHIP N-CH 600V 50A 3P | Bulk | - | - | * | - |

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