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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Powerex Inc. | IGBT MODULE 4500V 65A | Bulk | - | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() QS800SGL330A3S $1,275.00 | Quest Semi | 3300v 800amp IGBT | Bag | - | Chassis Mount | - | -40°C ~ 125°C (TJ) |
| Renesas Electronics Corporation | IGBT TRENCH 1250V 50A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) | |
| Renesas Electronics Corporation | IGBT TRENCH 1250V 80A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) | |
![]() RBN40H65T1FPQ-A0#CB0 $4.79 | Renesas Electronics Corporation | IGBT TRENCH 650V 80A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) |
![]() RBN50H65T1FPQ-A0#CB0 $5.08 | Renesas Electronics Corporation | IGBT TRENCH 650V 100A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) |
![]() RBN75H125S1FP4-A0#CB0 $11.59 | Renesas Electronics Corporation | HV-IGBT | Tube | - | - | * | - |
![]() RBN75H65T1FPQ-A0#CB0 $6.61 | Renesas Electronics Corporation | IGBT TRENCH 650V 150A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) |

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