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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Rohm SemiconductorIGBT TRENCH FS 650V 77A TO-263LTape & Reel (TR),Cut Tape (CT)TO-263LSurface Mount--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 73A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 73A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 1200V 80A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 1200V 80A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 1200V 80A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 1200V 80A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 114A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
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