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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Renesas Electronics CorporationRJH60D2DPP - IGBT 600V 25ABulk--*-
Renesas Electronics CorporationIGBT TRENCH 600V 25A TO-220FLTubeTO-220FLThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 35A LDPAKTape & Reel (TR),Cut Tape (CT)LDPAKSurface Mount-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 35A TO-220FLTubeTO-220FLThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 75A TO-247TubeTO-247Through Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 75A TO-3PTubeTO-3PThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 80A TO-3PTubeTO-3PThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 80A TO-3PFMTubeTO-3PFMThrough Hole-150°C (TJ)
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