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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Renesas Electronics Corporation | IGBT TRENCH 1200V 50A TO-3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) | |
![]() RJH1CV6DPK-00#T0 $4.96 | Renesas Electronics Corporation | IGBT TRENCH 1200V 60A TO-3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) |
| Renesas Electronics Corporation | IGBT TRENCH 1200V 70A TO-3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) | |
![]() RJH1CV7DPQ-E0#T2 $5.11 | Renesas Electronics Corporation | IGBT TRENCH 1200V 70A TO-247 | Bulk | TO-247 | Through Hole | - | 150°C (TJ) |
![]() RJH1DF7RDPQ-80#T2 $4.77 | Renesas | IGBT 1350V 60A TO-247 | Bulk | TO-247 | Through Hole | - | 150°C (TJ) |
![]() RJH3047ADPK-80#T2 $4.40 | Renesas Electronics Corporation | IGBT | Bulk | - | - | * | - |
![]() RJH3047DPK-80#T2 $4.22 | Renesas Electronics Corporation | IGBT | Bulk | - | - | * | - |
![]() RJH30E2DPP-00#T2 $1.80 | Renesas Electronics Corporation | IGBT | Bulk | - | - | * | - |

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