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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() RGWSX2TS65GC13 $6.22 | Rohm Semiconductor | IGBT TRENCH FS 650V 104A TO-247G | Tube | TO-247G | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGWX5TS65DGC11 $6.26 | Rohm Semiconductor | IGBT TRENCH FS 650V 132A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGWX5TS65DGC13 $7.59 | Rohm Semiconductor | IGBT TRENCH FS 650V 132A TO247GE | Bulk | TO-247GE | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGWX5TS65DHRC11 $6.48 | Rohm Semiconductor | IGBT TRENCH FS 650V 132A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGWX5TS65EHRC11 $9.99 | Rohm Semiconductor | IGBT TRENCH FS 650V 132A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGWX5TS65GC11 $3.50 | Rohm Semiconductor | IGBT TRENCH FS 650V 132A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGWX5TS65GC13 $6.56 | Rohm Semiconductor | IGBT TRENCH FS 650V 132A TO247GE | Tube | TO-247GE | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGWX5TS65HRC11 $4.14 | Rohm Semiconductor | IGBT TRENCH FS 650V 132A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |

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