ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 RJH1BF6RDPQ-80#T2 $7.07 | Renesas Electronics Corporation | IGBT 1100V 55A TO-247 | Bulk | TO-247 | Through Hole | - | 150°C (TJ) |
RJH1BF7DPQ-E0#T2 $6.55 | Renesas | RJH1BF7 - INSULATED GATE BIPOLAR | Bulk | - | - | - | - |
RJH1BF7RDPQ-80#T2 $5.30 | Renesas | IGBT 1100V 60A TO-247 | Bulk | TO-247 | Through Hole | - | 150°C (TJ) |
| Renesas Electronics Corporation | IGBT 1200V 40A TO-247 | Tube | TO-247 | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT 1200V 50A TO-247 | Tube | TO-247 | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT 1200V 55A TO-247 | Bulk | TO-247 | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT 1200V 60A TO-247 | Tube | TO-247 | Through Hole | - | 150°C (TJ) | |
RJH1CM5DPQ-E0#T2 $8.14 | Renesas Electronics Corporation | IGBT 1200V 30A TO-247 | Bulk | TO-247 | Through Hole | - | 150°C (TJ) |
