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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Renesas Electronics Corporation | IGBT TRENCH 650V 100A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) | |
 RJH65T04BDPM-A0#T2 $5.97 | Renesas Electronics Corporation | IGBT TRENCH 650V 60A TO-3PFP | Tube | TO-3PFP | Through Hole | - | 175°C (TJ) |
RJH65T04BDPMA0#T2F $4.17 | Renesas Electronics Corporation | IGBT TRENCH 650V 60A TO-3PFP | Tube | TO-3PFP | Through Hole | - | 175°C (TJ) |
 RJH65T14DPQ-A0#T0 $4.93 | Renesas Electronics Corporation | IGBT TRENCH 650V 100A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) |
RJH65T46DPQ-A0#T0 $5.46 | Renesas Electronics Corporation | IGBT TRENCH 650V 80A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) |
| Renesas Electronics Corporation | IGBT TRENCH 650V 90A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) | |
 RJP2557DPK-E $4.40 | Renesas Electronics Corporation | HIGH SPEED IGBT, 270V, 50A | Bulk | - | - | * | - |
 RJP3034DPP-90#T2F $1.89 | Renesas Electronics Corporation | HIGH SPEED IGBT | Bulk | - | - | * | - |
