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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() RJP3034DPP-B1#T2F $1.89 | Renesas Electronics Corporation | HIGH SPEED IGBT | Bulk | - | - | * | - |
![]() RJP3042DPP-00#T2 $1.56 | Renesas Electronics Corporation | HIGH SPEED IGBT | Bulk | - | - | * | - |
![]() RJP3043DPK-80#T2 $2.51 | Renesas Electronics Corporation | HIGH SPEED IGBT | Bulk | - | - | * | - |
![]() RJP3045DPP-B1#T2F $1.57 | Renesas Electronics Corporation | HIGH SPEED IGBT | Bulk | - | - | * | - |
![]() RJP3047ADPK-80#T2 $3.32 | Renesas Electronics Corporation | HIGH SPEED IGBT | Bulk | - | - | * | - |
![]() RJP3047DPK-80#T2 $3.32 | Renesas Electronics Corporation | HIGH SPEED IGBT | Bulk | - | - | * | - |
![]() RJP3049DPK-80#T2 $4.77 | Renesas Electronics Corporation | HIGH SPEED IGBT | Bulk | - | - | * | - |
![]() RJP3053DPP-A9#T2F $1.57 | Renesas Electronics Corporation | HIGH SPEED IGBT, 300V, 30A | Bulk | - | - | * | - |

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