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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Renesas Electronics CorporationIGBT 400VTube8-VSON (3x4.4)Surface Mount--40°C ~ 150°C (TJ)
Renesas Electronics CorporationIGBTS, 400V, 150A, N-CHANNELBulk--*-
Renesas Electronics CorporationIGBT 400V 8TSOJTape & Reel (TR)8-TSOJSurface Mount--40°C ~ 150°C (TJ)
Renesas Electronics CorporationIGBT 430V TO220FLTubeTO-220FLThrough Hole--40°C ~ 150°C (TJ)
Renesas Electronics CorporationIGBT 430V, 40A FOR PLASMA TVBulk--*-
Renesas Electronics CorporationIGBT 430V, 40A FOR PLASMA TVBulk--*-
Renesas Electronics CorporationIGBT 500V TO220FLTubeTO-220FLThrough Hole--40°C ~ 150°C (TJ)
Renesas Electronics CorporationIGBT 430V 200ABulk--*-
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