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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Renesas Electronics Corporation | IGBT 400V | Tube | 8-VSON (3x4.4) | Surface Mount | - | -40°C ~ 150°C (TJ) | |
![]() RJP4009ANS-WS#Q6 $3.13 | Renesas Electronics Corporation | IGBTS, 400V, 150A, N-CHANNEL | Bulk | - | - | * | - |
| Renesas Electronics Corporation | IGBT 400V 8TSOJ | Tape & Reel (TR) | 8-TSOJ | Surface Mount | - | -40°C ~ 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT 430V TO220FL | Tube | TO-220FL | Through Hole | - | -40°C ~ 150°C (TJ) | |
![]() RJP43F4ADPP-90#T2F $2.04 | Renesas Electronics Corporation | IGBT 430V, 40A FOR PLASMA TV | Bulk | - | - | * | - |
![]() RJP43F4ADPP-MB#T2F $2.55 | Renesas Electronics Corporation | IGBT 430V, 40A FOR PLASMA TV | Bulk | - | - | * | - |
| Renesas Electronics Corporation | IGBT 500V TO220FL | Tube | TO-220FL | Through Hole | - | -40°C ~ 150°C (TJ) | |
![]() RJP56F4ADPP-00#T2 $2.04 | Renesas Electronics Corporation | IGBT 430V 200A | Bulk | - | - | * | - |

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