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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Renesas Electronics Corporation | IGBT 600V 45A TO-3PFM | Tube | TO-3PFM | Through Hole | - | 150°C (TJ) | |
![]() RJP60D0DPP-M0#T2 $2.69 | Renesas Electronics Corporation | IGBT 600V 45A TO-220FL | Tube | TO-220FL | Through Hole | - | 150°C (TJ) |
| Renesas Electronics Corporation | IGBT TRENCH 600V 50A LDPAK | Tape & Reel (TR) | LDPAK | Surface Mount | - | 150°C (TJ) | |
![]() RJP60F0DPM-00#T1 $3.46 | Renesas Electronics Corporation | IGBT TRENCH 600V 50A TO-3PFM | Tube | TO-3PFM | Through Hole | - | 150°C (TJ) |
![]() RJP60F4DPM-00#T1 $4.67 | Renesas Electronics Corporation | IGBT TRENCH 600V 60A TO-3PFM | Tube | TO-3PFM | Through Hole | - | 150°C (TJ) |
![]() RJP60F5DPK-01#T0 $4.07 | Renesas Electronics Corporation | IGBT 600V 80A TO3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) |
![]() RJP60F5DPM-00#T1 $1.79 | Renesas Electronics Corporation | IGBT TRENCH 600V 80A TO-3PFM | Tube | TO-3PFM | Through Hole | - | 150°C (TJ) |
| Renesas Electronics Corporation | IGBT TRENCH 600V 45A TO-3PFM | Tube | TO-3PFM | Through Hole | - | 150°C (TJ) |

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