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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() RJP6055DPP-90#T2 $1.57 | Renesas Electronics Corporation | IGBT 630V, 40A FOR PLASMA TV | Bulk | - | - | * | - |
![]() RJP6065DPE-00#J3 $1.90 | Renesas Electronics Corporation | IGBT | Bulk | - | - | * | - |
![]() RJP6065DPN-P1#T2 $2.48 | Renesas Electronics Corporation | IGBT | Bulk | - | - | * | - |
![]() RJP6085DPK-00#T0 $3.78 | Renesas Electronics Corporation | IGBT 600V 40A TO3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) |
![]() RJP6085DPN-00#T2 $3.05 | Renesas Electronics Corporation | IGBT 600V 40A TO-220AB | Tube | TO-220AB | Through Hole | - | 150°C (TJ) |
![]() RJP60D0DPE-00#J3 $2.93 | Renesas Electronics Corporation | IGBT 600V 45A LDPAK | Tape & Reel (TR),Cut Tape (CT) | LDPAK | Surface Mount | - | 150°C (TJ) |
| Renesas Electronics Corporation | IGBT 600V 45A TO3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) | |
![]() RJP60D0DPK-01#T0 $1.90 | Renesas | IGBT 600V 45A TO-3P | Bulk | TO-3P | Through Hole | - | 150°C (TJ) |

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